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 IMAGE SENSOR
NMOS linear image sensor
S3901/S3904-F series
NMOS linear image sensors with fiber optic windows
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high sensitivity yet very low noise, delivering a high S/N even at low light levels. S3901/S3904-F series are current-output type NMOS linear image sensors with fiber optic windows and feature superior output linearity and wide dynamic range. The fiber optic windows allow efficient optical coupling to an image device such as image intensifiers suitable for low-light-level detection. The photodiodes of S3901-F series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 m. The photodiodes of S3904-F series also have a height of 2.5 mm but are arrayed at a spacing of 25 m. The photodiodes are available in 2 different pixel quantities for each series: 256 (S3901-256F), 512 (S3901-512F, S3904-512F), 1024 (S3904-1024F). Hamamatsu also provides S3902/S3903-F series having a pixel height of 0.5 mm.
Features
Applications
l Wide active area
Pixel pitch: 50 m (S3901-F series) 25 m (S3904-F series) Pixel height: 2.5 mm l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Lower power consumption: 1 mW Max. l Start pulse and clock pulses are CMOS logic compatible
l Multichannel spectrophotometry l Image readout system
s Equivalent circuit
START CLOCK CLOCK st 2 DIGITAL SHIFT REGISTER (MOS SHIFT REGISTER)
s Active area structure
ACTIVE PHOTODIODE
ACTIVE VIDEO
b
Vss SATURATION CONTROL GATE SATURATION CONTROL DRAIN DUMMY DIODE
a
FIBER OPTIC PLATE
OXIDATION SILICON
1.0 m 400 m
KMPDA0131EA
KMPDC0020EA
N TYPE SILICON P TYPE SILICON
S3901-F SERIES: a=50 m, b=45 m S3904-F SERIES: a=25 m, b=20 m
s Absolute maximum ratings
Parameter Input pulse (1, 2, st) voltage Power consumption *1 Operating temperature *2 Storage temperature *1: V=5.0 V *2: No condensation Symbol V P Topr Tstg Value 15 1 -40 to +65 -40 to +85
1.0 m
DUMMY VIDEO
2.5 mm
1
END OF SCAN
Unit V mW C C
NMOS linear image sensor
s Shape specifications
Parameter Number of pixels Package length Number of pins Window material Weight S3901-256F 256 31.75 S3901-512F 512 40.6
S3901/S3904-F series
S3904-1024F 1024 40.6 Unit mm g
S3904-512F 512 31.75
22 Fiber optic plate 8.0 10.0 8.0
22 Fiber optic plate 10.0
s Specifications (Ta=25 C)
Parameter Pixel pitch Pixel height Spectral response range (10 % of peak) Peak sensitivity wavelength Photodiode dark current *3 Photodiode capacitance *3 Saturation exposure *3, *4 Saturation output charge *3 Photo response non-uniformity *5 Symbol p ID Cph Esat Qsat PRNU Min. S3901-F series Typ. Max. 50 2.5 360 to 1000 600 0.2 20 200 50 0.6 5 Min. S3904-F series Typ. Max. 25 2.5 360 to 1000 600 0.1 10 200 25 0.3 5 Unit m mm nm nm pA pF ml * s x pC %
*3: Vb=2.0 V, V=5.0 V *4: 2856 K, tungsten lamp *5: 50 % of saturation, excluding the start pixel and last pixel
s Electrical characteristics (Ta=25 C)
Parameter Clock pulse (1, 2) voltage Symbol Condition High V1, V2 (H) Low V1, V2 (L) High Vs (H) Start pulse (st) voltage Low Vs (L) Video bias voltage *6 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd tr1, tr2 Clock pulse (1, 2) rise / fall time *7 tf1, tf2 Clock pulse (1, 2) pulse width tpw1, tpw2 Start pulse (st) rise / fall time trs, tfs Start pulse (st) pulse width tpws Start pulse (st) and clock pulse tov (2) overlap 7 Clock pulse space * X1, X2 Data rate *8 f Video delay time Clock pulse (1, 2) line capacitance Saturation control gate (Vscg) line capacitance Video line capacitance tvd C Cscg CV 50 % of saturation *8, *9 5 V bias 5 V bias 2 V bias
S3901-F series Min. Typ. Max. 4.5 5 10 0 0.4 4.5 10 V1 0 0.4 1.5 V - 3.0 V - 2.5 0 Vb 200 200 200 20 20 2000 -
S3904-F series Min. Typ. Max. 4.5 5 10 0 0.4 4.5 10 V1 0 0.4 1.5 V - 3.0 V - 2.5 0 Vb 200 200 200 20 20 2000 -
Unit V V V V V V V ns ns ns ns ns ns kHz ns ns pF pF pF pF pF pF
trf - 20 0.1 120 (-256 F) 160 (-512 F) 36 (-256 F) 67 (-512 F) 20 (-256 F) 35 (-512 F) 11 (-256 F) 20 (-512 F)
trf - 20 0.1 150 (-512 F) 200 (-1024 F) 50 (-512 F) 100 (-1024 F) 24 (-512 F) 45 (-1024 F) 16 (-512 F) 30 (-1024 F)
*6: V is input pulse voltage. *7: trf is the clock pulse rise or fall time. A clock pulse space of rise time/fall time - 20 ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns. *8: Vb=2.0 V, V=5.0 V *9: Measured with C7883 driver circuit.
NMOS linear image sensor
s Spectral response (typical example)
0.3 (Ta=25 C)
S3901/S3904-F series
PHOTO SENSITIVITY (A/W)
0.2
0.1
0 200
400
600
800
1000
1200
WAVELENGTH (nm)
KMPDB0173EA
s Output charge vs. exposure
102 (Typ. Vb=2 V, V =5 V, light source: 2856 K)
101
SATURATION CHARGE
OUTPUT CHARGE (pC)
S3901-F SERIES 100
10-1
S3904-F SERIES SATURATION CHARGE
10-2
10-3 10-5
10-4
10-3
10-2
10-1
100
EXPOSURE (lx * s)
KMPDB0099EB
NMOS linear image sensor
s Dimensional outlines (unit: mm) S3901-256F, S3904-512F
5.4 0.2
S3901/S3904-F series
S3901-512F, S3904-1024F
5.4 0.2 5.0 0.2 10.4
ACTIVE AREA 12.8 x 2.5 6.4 0.3
ACTIVE AREA 25.6 x 2.5 12.8 0.3
5.0 0.2
10.4
PHOTOSENSITIVE SURFACE 10.0 9.8
40.6 40.0
31.75 31.2
PHOTOSENSITIVE SURFACE 10.0 9.8
3.0 3.0
0.51 2.54 25.4 10.16
0.25
0.51 2.54 25.4 10.16
3.0 3.0
0.25
KMPDA0093EA
KMPDA0094EA
s Pin connection
2 1 st Vss Vscg NC Vscd Vss ACTIVE VIDEO DUMMY VIDEO Vsub 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 NC NC NC NC NC NC NC NC NC NC END OF SCAN
Vss, Vsub and NC should be grounded.
KMPDC0056EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1003E03 Oct. 2005 DN


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